Reduced Coercive Field in BiFeO3 Thin Films through Domain Engineering

Journal Article · Sat Jan 01 04:00:00 EST 2011 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201000807· OSTI ID:1115341

Shelke, Vilas K ^[1]; Mazumdar, Dipanjan ^[1]; Srinivasan, Dr. Gopalan ^[2]; Jesse, Stephen ^[1]; Kalinin, Sergei V ^[1]; Baddorf, Arthur P ^[1]; Gupta, Dr. Arunava ^[3]

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1. ORNL
2. Oakland University, Rochester, MI
3. University of Alabama, Tuscaloosa

The bismuth ferrite (BiFeO3) material offers a comprehensive package of multifunctionality. In addition to the multiferroic behavior, i.e. coexistence of electric and magnetic orderings,[1] it also exhibits photovoltaic effect, [2] metal-insulator transition,[3] electric modulation of conduction,[4] and terahertz radiation emission.[5] The possibility of joint control of electric, magnetic, and optical properties provides several degrees of freedom to design exotic devices. It is a green energy material in the sense that it is lead-free and energy-efficient due to cryogen-less functionality. Therefore, a wide variety of applications in terms of sensors, memories and spintronic devices are foreseen.[6] However, the incipient lower value of magneto-electric coupling has raised skepticism regarding its multiferroic capabilities and allied applications.[6] Nevertheless, the highest value of ferroelectric polarization (~ 100 C.cm-2) is very promising for next generation ferroelectric random access memory devices.

• Research Organization: Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1115341
• Journal Information: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 5 Vol. 23; ISSN 0935-9648
• Country of Publication: United States
• Language: English