Lattice Dynamical Properties of Ferroelectric Thin Films at the Nanoscale

Technical Report · Mon Mar 31 04:00:00 EDT 2014

DOI:https://doi.org/10.2172/1114213· OSTI ID:1114213

Xi, Xiaoxing ^[1]

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1. Temple University, Philadelphia, PA (United States); Temple University

In this project, we have successfully demonstrated atomic layer-by-layer growth by laser MBE from separate targets by depositing SrTiO₃ films from SrO and TiO₂ targets. The RHEED intensity oscillation was used to monitor and control the growth of each SrO and TiO₂ layer. We have shown that by using separate oxide targets, laser MBE can achieve the same level of stoichiometry control as the reactive MBE. We have also studied strain relaxation in LaAlO₃ films and its effect on the 2D electron gas at LaAlO₃/SrTiO₃ interface. We found that there are two layers of different in-plane lattice constants in the LaAlO₃ films, one next to the SrTiO₃ substrate nearly coherently strained, while the top part relaxed as the film thickness increases above 20 unit cells. This strain relaxation significantly affect the transport properties of the LaAlO₃/SrTiO₃ interface.

• Research Organization: Pennsylvania State University, University Park, PA (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: FG02-01ER45907
• OSTI ID: 1114213
• Report Number(s): DOE-PSU--45907-F
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
atomic layer-by-layer growth
epitaxial strain
oxide interface
oxide thin films