Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using Molecular Passivation

Journal Article · Mon Oct 21 00:00:00 EDT 2013 · Applied Physics Letters, 103(17):Article No. 171602

DOI:https://doi.org/10.1063/1.4826457· OSTI ID:1114100

Rajachidambaram, Meena Suhanya; Pandey, Archana; Vilayur Ganapathy, Subramanian; Nachimuthu, Ponnusamy; Thevuthasan, Suntharampillai; Herman, Gregory S.

The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFT) have been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid (n-HPA) when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1114100
• Report Number(s): PNNL-SA-98838; 35219; KP1704020
• Journal Information: Applied Physics Letters, 103(17):Article No. 171602, Journal Name: Applied Physics Letters, 103(17):Article No. 171602
• Country of Publication: United States
• Language: English

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Environmental Molecular Sciences Laboratory