Sub bandgap light induced carrier generation at room temperature in Silicon Carbide MOS capacitors.
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1109335
- Report Number(s):
- SAND2011-3524J; 471538
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 99; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Sub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS Capacitors.
Sub-bandgap light-induced carrier generation at room temperature in Silicon Carbide MOS capacitors.
Sub-bandgap light-induced carrier generation at room temperature in 4H-SiC Metal Oxide Semiconductor capacitors.
Conference
·
Thu Sep 01 00:00:00 EDT 2011
·
OSTI ID:1106051
Sub-bandgap light-induced carrier generation at room temperature in Silicon Carbide MOS capacitors.
Conference
·
Mon Aug 01 00:00:00 EDT 2011
·
OSTI ID:1106915
Sub-bandgap light-induced carrier generation at room temperature in 4H-SiC Metal Oxide Semiconductor capacitors.
Journal Article
·
Thu Sep 01 00:00:00 EDT 2011
· Applied Physics Letters
·
OSTI ID:1106668