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Influence of Growth Temperature on AlGaN Multi-Quantum Well Point Defect Incorporation and Photoluminescence Efficiency.

Journal Article · Mon Feb 28 23:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3583448· OSTI ID:1109049

Armstrong, Andrew; Allerman, Andrew A.; Crawford, Mary Hagerott; Henry, Tania A.

Abstract not provided.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1109049

Report Number(s):: SAND2011-1665J; 471077

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 98; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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