Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Bounds on the range of density-functional-theory point-defect levels in semiconductors and insulators.

Journal Article · · Computational Materials Science
OSTI ID:1109008

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1109008
Report Number(s):
SAND2013-7445J; 471113
Journal Information:
Computational Materials Science, Journal Name: Computational Materials Science
Country of Publication:
United States
Language:
English

Similar Records

Bounds on the range of density-functional-theory point-defect levels in semiconductors and insulators
Journal Article · Mon Sep 01 00:00:00 EDT 2014 · Computational Materials Science · OSTI ID:1556543

Density-Functional Theory (DFT) Studies of Point Defects in Semiconductors: Perspectives and Challenges.
Conference · Fri Nov 30 23:00:00 EST 2012 · OSTI ID:1072526

Density-Functional Theory Calculations for Charged Defects in Semiconductors.
Conference · Sat May 01 00:00:00 EDT 2010 · OSTI ID:1143523

Related Subjects