Characterization and comparison of devices fabricated from epitaxial graphene on SiC and electrostatically transferred graphene.
Conference
·
OSTI ID:1108782
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1108782
- Report Number(s):
- SAND2011-1903C; 470965
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characterization and Comparison of Devices Fabricated From Epitaxial Graphene on SiC and Electrostatically Transferred Graphene.
Characterization of devices fabricated from electrostatically transferred graphene: comparison with epitaxial based devices.
Electrostatic Transfer of Epitaxial Graphene.
Conference
·
Fri Dec 31 23:00:00 EST 2010
·
OSTI ID:1120859
Characterization of devices fabricated from electrostatically transferred graphene: comparison with epitaxial based devices.
Conference
·
Fri Oct 01 00:00:00 EDT 2010
·
OSTI ID:1121643
Electrostatic Transfer of Epitaxial Graphene.
Conference
·
Sun May 01 00:00:00 EDT 2011
·
OSTI ID:1109245