FIRST-PRINCIPLES DEFECT CHEMISTRY FOR MODELING IRRADIATED GaAs AND III-V SEMICONDUCTOR DEVICES.
Journal Article
·
· JOURNAL OF RADIATION EFFECTS, RESEARCH AND ENGINEERING
OSTI ID:1107718
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000;
- OSTI ID:
- 1107718
- Report Number(s):
- SAND2011-4056J; 466066
- Journal Information:
- JOURNAL OF RADIATION EFFECTS, RESEARCH AND ENGINEERING, Journal Name: JOURNAL OF RADIATION EFFECTS, RESEARCH AND ENGINEERING
- Country of Publication:
- United States
- Language:
- English
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