First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO

Journal Article · Fri Dec 28 00:00:00 EST 2012 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.109.267401· OSTI ID:1105571

Alkauskas, A.; Lyons, J. L.; Steiauf, D.; Van de Walle, C. G.

• Research Organization: Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: SC0001009
• OSTI ID: 1105571
• Journal Information: Physical Review Letters, Vol. 109, Issue 26; Related Information: CEEM partners with the University of California, Santa Barbara (lead); Purdue University; Los Alamos National Laboratory; National Renewable Energy Laboratory; ISSN 0031--9007
• Country of Publication: United States
• Language: English

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