Giant Ambipolar Rashba Effect in the Semiconductor BiTeI

Journal Article · Thu Aug 30 00:00:00 EDT 2012 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.109.096803· OSTI ID:1103215

Crepaldi, A.; Moreschini, L.; Autès, G.; Tournier-Colletta, C.; Moser, S.; Virk, N.; Berger, H.; Bugnon, Ph.; Chang, Y. J.; Kern, K.; Bostwick, A.; Rotenberg, E.; Yazyev, O. V.; Grioni, M.

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• Sponsoring Organization: USDOE
• OSTI ID: 1103215
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 9 Vol. 109; ISSN 0031-9007; ISSN PRLTAO
• Publisher: American Physical Society
• Country of Publication: United States
• Language: English