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Title: Interplay of topological surface and bulk electronic states in Bi2Se3

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics

Sponsoring Organization:
USDOE
OSTI ID:
1102284
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Vol. 87 Journal Issue: 8; ISSN 1098-0121
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 9 works
Citation information provided by
Web of Science

References (33)

Observation of a Warped Helical Spin Texture in Bi 2 Se 3 from Circular Dichroism Angle-Resolved Photoemission Spectroscopy journal November 2011
Generalized Gradient Approximation Made Simple journal October 1996
Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3 journal August 2009
Observation of Fermi-energy dependent unitary impurity resonances in a strong topological insulator Bi2Se3 with scanning tunneling spectroscopy journal May 2012
A technique for relativistic spin-polarised calculations journal August 1977
STM Imaging of Electronic Waves on the Surface of Bi2Te3: Topologically Protected Surface States and Hexagonal Warping Effects journal January 2010
Projector augmented-wave method journal December 1994
Landau Quantization of Topological Surface States in Bi 2 Se 3 journal August 2010
Observation of Unconventional Quantum Spin Textures in Topological Insulators journal February 2009
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal July 1996
Photoemission Spectroscopy of Magnetic and Nonmagnetic Impurities on the Surface of the Bi 2 Se 3 Topological Insulator journal March 2012
Z2 Topological Order and the Quantum Spin Hall Effect journal September 2005
Surface Scattering via Bulk Continuum States in the 3D Topological Insulator Bi 2 Se 3 journal July 2011
Spatial fluctuations of helical Dirac fermions on the surface of topological insulators journal October 2011
Widespread spin polarization effects in photoemission from topological insulators journal October 2011
Momentum-resolved Landau-level spectroscopy of Dirac surface state in Bi 2 Se 3 journal August 2010
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Observation of a large-gap topological-insulator class with a single Dirac cone on the surface journal May 2009
Structural defects and electronic properties of the Cu-doped topological insulator Bi 2 Se 3 journal August 2011
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface journal May 2009
Topological surface states protected from backscattering by chiral spin texture journal August 2009
Theory of tunneling conductance and surface-state transition in superconducting topological insulators journal May 2012
Pressure-induced superconductivity in topological parent compound Bi 2 Te 3 journal December 2010
Spin Polarization and Transport of Surface States in the Topological Insulators Bi 2 Se 3 and Bi 2 Te 3 from First Principles journal December 2010
Surface effects in layered semiconductors Bi 2 Se 3 and Bi 2 Te 3 journal February 2004
Hexagonal Warping Effects in the Surface States of the Topological Insulator Bi 2 Te 3 journal December 2009
Ab initiomolecular dynamics for liquid metals journal January 1993
Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry journal December 2009
A topological insulator surface under strong Coulomb, magnetic and disorder perturbations journal December 2010
Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment journal February 2012
A tunable topological insulator in the spin helical Dirac transport regime journal July 2009
Scanning tunneling microscopy of defect states in the semiconductor Bi 2 Se 3 journal October 2002

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