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Title: Dirac cone shift of a passivated topological Bi2Se3 interface state

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics

Sponsoring Organization:
USDOE
OSTI ID:
1102072
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Vol. 87 Journal Issue: 15; ISSN 1098-0121
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 21 works
Citation information provided by
Web of Science

References (45)

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Conduction band splitting and transport properties of Bi2Se3 journal April 2004
Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface journal October 2011
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Rashba Spin-Splitting Control at the Surface of the Topological Insulator Bi 2 Se 3 journal October 2011
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Momentum-resolved Landau-level spectroscopy of Dirac surface state in Bi 2 Se 3 journal August 2010
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Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3 journal April 2012
Observation of a large-gap topological-insulator class with a single Dirac cone on the surface journal May 2009
Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3 journal November 2010
Electronic transport in two-dimensional graphene journal May 2011
Topological surface states protected from backscattering by chiral spin texture journal August 2009
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Far-infrared magnetospectroscopy of the hole pocket in bismuth. I. Band-structure effects journal August 1976
Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3Nanodevices journal December 2010
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Hexagonal Warping Effects in the Surface States of the Topological Insulator Bi 2 Te 3 journal December 2009
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Topological field theory of time-reversal invariant insulators journal November 2008
Structural and dielectric study of parylene C thin films journal April 2009
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Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3 journal May 2011
Angular-dependent oscillations of the magnetoresistance in Bi 2 Se 3 due to the three-dimensional bulk Fermi surface journal May 2010
Two-dimensional surface state in the quantum limit of a topological insulator journal November 2010
Bulk Fermi surface coexistence with Dirac surface state in Bi 2 Se 3 : A comparison of photoemission and Shubnikov–de Haas measurements journal May 2010
Automated measuring instrument of the surface electric potential and potential distribution journal February 1998
On the mechanisms of current transfer in n-In2Se3-p-GaSe heterostructures journal September 2002
Shubnikov-de Haas effects in Bi2Se3 with high carrier concentrations journal August 1973
Strong surface scattering in ultrahigh-mobility Bi 2 Se 3 topological insulator crystals journal June 2010
Subbands in the gap in inverted-band semiconductor quantum wells journal April 1987

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