Evolution of superclusters and delocalized states in GaAs1–xNx

Fluegel, B.; Alberi, K.; Beaton, D. A.; Crooker, S. A.; Ptak, A. J.; Mascarenhas, A.

doi:10.1103/PhysRevB.86.205203

Title: Evolution of superclusters and delocalized states in GaAs_1–xN_x

Journal Article · Wed Nov 21 00:00:00 EST 2012 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.86.205203· OSTI ID:1101811

Fluegel, B.; Alberi, K.; Beaton, D. A.; Crooker, S. A.; Ptak, A. J.; Mascarenhas, A.

The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs_1–xN_x was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.

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Sponsoring Organization:: USDOE

OSTI ID:: 1101811

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Vol. 86 Journal Issue: 20; ISSN 1098-0121

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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References (15)

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Title: Evolution of superclusters and delocalized states in GaAs_1–xN_x