Strain-induced darkening of trapped excitons in coupled quantum wells at low temperature
Journal Article
·
· Physical Review B
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1099543
- Journal Information:
- Physical Review B, Vol. 83, Issue 24; ISSN 1098-0121
- Publisher:
- American Physical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 15 works
Citation information provided by
Web of Science
Web of Science
Similar Records
Darkening of interwell excitons in coupled quantum wells due to a stress-induced direct-to-indirect transition
Strain-induced lateral confinement of excitons in GaAs-AlGaAs quantum well microstructures
Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on In{sub x}Ga{sub 1−x}N/GaN quantum wells studied with time-resolved cathodoluminescence
Journal Article
·
Wed Dec 09 00:00:00 EST 2015
· Physical Review B
·
OSTI ID:1099543
+3 more
Strain-induced lateral confinement of excitons in GaAs-AlGaAs quantum well microstructures
Journal Article
·
Mon Aug 29 00:00:00 EDT 1988
· Appl. Phys. Lett.; (United States)
·
OSTI ID:1099543
+4 more
Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on In{sub x}Ga{sub 1−x}N/GaN quantum wells studied with time-resolved cathodoluminescence
Journal Article
·
Wed Jan 28 00:00:00 EST 2015
· Journal of Applied Physics
·
OSTI ID:1099543