Optical Properties of Strained AlGaN and GaInN on GaN
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February 1997 |
First-principles calculation of the thermodynamics of alloys: Effect of lattice vibrations
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June 2006 |
Quasichemical approximation in binary alloys
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September 1987 |
Screened hybrid density functionals applied to solids
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April 2006 |
Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys
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January 2006 |
Band parameters for nitrogen-containing semiconductors
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September 2003 |
Properties of Ga 1- x In x N Films Prepared by MOVPE
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August 1989 |
Density-functional theory applied to phase transformations in transition-metal alloys
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April 1983 |
From ultrasoft pseudopotentials to the projector augmented-wave method
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January 1999 |
A simple approach to heterojunctions
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January 1977 |
Ordering in ternary nitride semiconducting alloys
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January 2012 |
Die Konstitution der Mischkristalle und die Raumf�llung der Atome
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January 1921 |
Energy barriers and interface states at heterojunctions
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February 1979 |
Electronic and optical properties of Mg x Zn 1− x O and Cd x Zn 1− x O from ab initio calculations
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August 2011 |
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June 2006 |
First-principles calculation of temperature-composition phase diagrams of semiconductor alloys
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April 1990 |
Unusual properties of the fundamental band gap of InN
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May 2002 |
Luminescences from localized states in InGaN epilayers
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May 1997 |
Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition
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August 1997 |
Theory of semiconductor heterojunctions: The role of quantum dipoles
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October 1984 |
X-ray Diffraction Study of Composition Inhomogeneities in Ga1-xInxN Thin Layers
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October 2001 |
Modeling the compositional instability in wurtzite
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February 2008 |
Molecular simulation study of miscibility of ternary and quaternary InGaAlN alloys
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June 2004 |
Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
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May 2007 |
Self-Consistent Equations Including Exchange and Correlation Effects
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November 1965 |
The Blue Laser Diode
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January 1997 |
Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers
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June 2002 |
Phase separation in InGaN grown by metalorganic chemical vapor deposition
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January 1998 |
First-principles calculations of gap bowing in and alloys: Relation to structural and thermodynamic properties
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February 2002 |
InGaN: An overview of the growth kinetics, physical properties and emission mechanisms
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January 2008 |
Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy
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April 1998 |
Compositional inhomogeneity and immiscibility of a GaInN ternary alloy
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August 1997 |
Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach
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April 2011 |
When group-III nitrides go infrared: New properties and perspectives
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July 2009 |
Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations
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March 2008 |
Growth of In-Rich In x Al1−x N Films on (0001) Sapphire by RF-MBE and their Properties
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September 2007 |
First-principles calculations of the thermodynamic and structural properties of strained and alloys
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July 2000 |
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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October 1996 |
Bridging the gap between atomic microstructure and electronic properties of alloys: The case of (In,Ga)N
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July 2010 |
Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
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October 1991 |
Valence-band splittings in cubic and hexagonal AlN, GaN, and InN
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December 2010 |
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
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September 2006 |
Limits and accuracy of valence force field models for alloys
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February 2001 |
MOVPE of GaInN heterostructures and quantum wells
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June 1998 |
Phase stability, chemical bonds, and gap bowing of alloys: Comparison between cubic and wurtzite structures
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July 2006 |
X‐Ray Measurement of Order in Single Crystals of Cu 3 Au
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January 1950 |
Effect of composition on the band gap of strained InxGa1−xN alloys
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April 2003 |
Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition
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October 1998 |
Research challenges to ultra-efficient inorganic solid-state lighting
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December 2007 |
Band Gap of Hexagonal InN and InGaN Alloys
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December 2002 |
III–V nitride based light-emitting devices
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April 1997 |
Preparation and optical properties of Ga 1− x In x N thin films
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August 1975 |
Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy
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August 1998 |
Thermodynamic states and phase diagrams for bulk-incoherent, bulk-coherent, and epitaxially-coherent semiconductor alloys: Application to cubic (Ga,In)N
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May 2008 |
Cubic inclusions in hexagonal AlN, GaN, and InN: Electronic states
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September 2011 |
Solid phase immiscibility in GaInN
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October 1996 |
Erratum: “Screened hybrid density functionals applied to solids” [J. Chem. Phys. 124, 154709 (2006)]
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December 2006 |
Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)
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April 2002 |
Structural analysis of InGaN epilayers
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July 2001 |
Ab-initio theory of semiconductor band structures: New developments and progress
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August 2009 |
The Compressibility of Media under Extreme Pressures
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September 1944 |
Gap bowing and Stokes shift in InxGa1−xN alloys: First-principles studies
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February 2002 |
Electronic excitations: density-functional versus many-body Green’s-function approaches
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June 2002 |
Size effects in band gap bowing in nitride semiconducting alloys
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April 2011 |
Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry
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May 2008 |
Functional designed to include surface effects in self-consistent density functional theory
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August 2005 |
Compositional modulation in
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April 2006 |
Phase separation in InGaN/GaN multiple quantum wells
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April 1998 |
Quasiparticle band structure based on a generalized Kohn-Sham scheme
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September 2007 |
Phase diagram, chemical bonds, and gap bowing of cubic InxAl1−xN alloys: Ab initio calculations
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December 2002 |
Crystal structure refinement of AlN and GaN
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September 1977 |
Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys
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August 2009 |
Compositional dependence of the strain-free optical band gap in InxGa1−xN layers
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April 2001 |
Metalorganic Molecular Beam Epitaxy of InGaN Layers and Their Optical Properties
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November 1999 |
The composition dependence of the InxGa1−xN bandgap
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August 2004 |
Optical properties and electronic structure of InN and In-rich group III-nitride alloys
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August 2004 |
Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
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August 2010 |
Special points for Brillouin-zone integrations
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June 1976 |
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
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August 2003 |
Ab initio description of heterostructural alloys: Thermodynamic and structural properties of and
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June 2010 |
Consistent structural properties for AlN, GaN, and InN
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March 1995 |
Band gap bowing parameter of In1−xAlxN
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December 2008 |
Inhomogeneous Electron Gas
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November 1964 |
Effective Band Structure of Random Alloys
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June 2010 |
Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy
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October 1998 |
Band bowing and band alignment in InGaN alloys
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January 2010 |
Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations
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January 2009 |
Approximation to density functional theory for the calculation of band gaps of semiconductors
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September 2008 |
Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes
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November 2011 |
Effects of the narrow band gap on the properties of InN
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November 2002 |
Ordering tendencies in octahedral MgO-ZnO alloys
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October 2003 |
Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
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September 2005 |
Lattice parameter and energy band gap of cubic AlxGayIn1−x−yN quaternary alloys
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August 2003 |
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
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December 2003 |