Spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides

Journal Article · Tue Jan 01 04:00:00 EST 2013 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.88.125301· OSTI ID:1096378

Shan, Wen-Yu ^[1]; Lu, Hai-Zhou ^[2]; Xiao, Di ^[1]

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1. Carnegie Mellon University (CMU)
2. University of Hong Kong, The

We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is comparable to the intrinsic one with opposite sign in the presence of scalar andmagnetic scattering. Intervalley scattering tends to suppress the side-jump contribution due to the loss of coherence. By tuning the ratio of intra- to intervalley scattering, the spin Hall conductivity shows a sign change in hole-doped samples. The multiband effect in other doping regimes is considered, and it is found that the sign change exists in the heavily hole-doped regime, but not in the electron-doped regime.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1096378
• Journal Information: Physical Review B, Journal Name: Physical Review B Journal Issue: 12 Vol. 88; ISSN 1098-0121
• Country of Publication: United States
• Language: English