Influence of RF-sputtering power on formation of vertically stacked Si1-xGex nanocrystals formation ultra-thin amorphous Al2O3 layers: structural and photoluminescence properties

Journal Article · Tue Jan 01 00:00:00 EST 2013 · Journal of Physics D: Applied Physics

OSTI ID:1093728

Vieira, E. ^[1]; Martin-Sanchez, J. ^[2]; Roldan Gutierrez, Manuel A ^[3]; Varela del Arco, Maria ^[3]; Buljan, M. ^[4]; Bernstorff, S. ^[5]; Barradas, N. ^[6]; Franco, N ^[6]; Correia, R. ^[7]; Rolo, A. G. ^[1]; Pennycook, Stephen J ^[3]; Molina, S. I. ^[8]; Alves, E. ^[6]; Chahboun, A. ^[9]; Gomes, M. J.M. ^[1]

---

1. University of Minho, Portugal
2. CSIC - Instituto de Optica, Madrid
3. ORNL
4. R. Boskovic Institute, Zagreb, Croatia
5. Sincrotrone Trieste, Basovizza, Italy
6. Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal
7. University of Aveiro, Portugal
8. Universidad de Cadiz, Spain
9. FST Tanger, Morocco

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1093728
• Journal Information: Journal of Physics D: Applied Physics, Vol. 46, Issue 1
• Country of Publication: United States
• Language: English