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Additives to silane for thin film silicon photovoltaic devices

Patent ·
OSTI ID:1093446

Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

Research Organization:
Air Products and Chemicals, Inc. (Allentown, PA)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0000580
Assignee:
Air Products and Chemicals, Inc. (Allentown, PA)
Patent Number(s):
8,535,760
Application Number:
12/872,806
OSTI ID:
1093446
Country of Publication:
United States
Language:
English

References (16)

Amorphous silicon solar cell journal June 1976
Effect of halogen additives on the stability of a-Si:H films deposited at a high-growth rate journal February 2001
A study of hydrogenated amorphous silicon deposited by rf glow discharge in silane‐hydrogen mixtures journal September 1984
The Influence of the Si-H 2 Bond on the Light-Induced Effect in a-Si Films and a-Si Solar Cells journal October 1989
Low-temperature growth of crystalline silicon on a chlorine-terminated surface journal November 1999
Intrinsic microcrystalline silicon by plasma-enhanced chemical vapor deposition from dichlorosilane journal August 1998
Cluster-Suppressed Plasma Chemical Vapor Deposition Method for High Quality Hydrogenated Amorphous Silicon Films journal February 2002
Effect of higher-silane formation on electron temperature in a silane glow-discharge plasma journal October 2000
Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution journal November 1996
Relationship between the photo-induced degradation characteristics and film structure of a-Si:H films prepared under various conditions
  • Nishimoto, T.; Takai, M.; Kondo, M.
  • 28th IEEE Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) https://doi.org/10.1109/PVSC.2000.916023
conference January 2000
A highly stabilized hydrogenated amorphous silicon film having very low hydrogen concentration and an improved Si bond network journal February 2005
PECVD of hydrogenated silicon thin films from SiH4+H2+Si2H6 mixtures journal March 2004
Microstructure and the light‐induced metastability in hydrogenated amorphous silicon journal May 1988
Light-induced effects in hydrogenated amorphous silicon films grown from high hydrogen dilution of silane journal April 2002
Exploration of the deposition limits of microcrystalline silicon journal January 2005
Hydrogen structures and the optoelectronic properties in transition films from amorphous to microcrystalline silicon prepared by hot-wire chemical vapor deposition journal April 2003

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