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Title: Electrochemical Polishing Applications and EIS of a Vitamin B{sub 4}-Based Ionic Liquid

Conference · · Journal of The Electrochemical Society
DOI:https://doi.org/10.1149/2.013303jes· OSTI ID:1089292
 [1];  [1];  [2];  [1]
  1. Christopher Newport University, Newport News, VA (United States)
  2. Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

Modern particle accelerators require minimal interior surface roughness for Niobium superconducting radio frequency (SRF) cavities. Polishing of the Nb is currently achieved via electrochemical polishing with concentrated mixtures of sulfuric and hydrofluoric acids. This acid-based approach is effective at reducing the surface roughness to acceptable levels for SRF use, but due to acid-related hazards and extra costs (including safe disposal of used polishing solutions), an acid-free method would be preferable. This study focuses on an alternative electrochemical polishing method for Nb, using a novel ionic liquid solution containing choline chloride, also known as Vitamin B{sub 4} (VB{sub 4}). Potentiostatic electrochemical impedance spectroscopy (EIS) was also performed on the VB4-based system. Nb polished using the VB4-based method was found to have a final surface roughness comparable to that achieved via the acid-based method, as assessed by atomic force microscopy (AFM). These findings indicate that acid-free VB{sub 4}-based electrochemical polishing of Nb represents a promising replacement for acid-based methods of SRF cavity preparation.

Research Organization:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
AC05-06OR23177
OSTI ID:
1089292
Report Number(s):
JLAB-ACC-13-1663; DOE/OR/23177-2648; TRN: US1300381
Journal Information:
Journal of The Electrochemical Society, Vol. 160, Issue 3; Conference: 222nd ECS Meeting: 2012 Fall Meeting of ECSJ: PRiME 2012: Honolulu, HI (United States), 7-12 Oct 2012; ISSN 0013-4651
Country of Publication:
United States
Language:
English

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