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Title: Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe

Authors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1086894
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 23, 7 June 2013; Related Information: Article No. 235901
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; Chemical and Material Sciences

Citation Formats

Ma, J., and Wei, S. H. Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe. United States: N. p., 2013. Web. doi:10.1103/PhysRevLett.110.235901.
Ma, J., & Wei, S. H. Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe. United States. https://doi.org/10.1103/PhysRevLett.110.235901
Ma, J., and Wei, S. H. Fri . "Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe". United States. https://doi.org/10.1103/PhysRevLett.110.235901.
@article{osti_1086894,
title = {Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe},
author = {Ma, J. and Wei, S. H.},
abstractNote = {},
doi = {10.1103/PhysRevLett.110.235901},
url = {https://www.osti.gov/biblio/1086894}, journal = {Physical Review Letters},
number = 23, 7 June 2013,
volume = 110,
place = {United States},
year = {2013},
month = {6}
}