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Title: High-efficiency photovoltaics based on semiconductor nanostructures

Technical Report ·
DOI:https://doi.org/10.2172/1083988· OSTI ID:1083988
 [1];  [2];  [1]
  1. University of California, San Diego
  2. University of Texas at Austin

The objective of this project was to exploit a variety of semiconductor nanostructures, specifically semiconductor quantum wells, quantum dots, and nanowires, to achieve high power conversion efficiency in photovoltaic devices. In a thin-film device geometry, the objectives were to design, fabricate, and characterize quantum-well and quantum-dot solar cells in which scattering from metallic and/or dielectric nanostructures was employed to direct incident photons into lateral, optically confined paths within a thin (~1-3um or less) device structure. Fundamental issues concerning nonequilibrium carrier escape from quantum-confined structures, removal of thin-film devices from an epitaxial growth substrate, and coherent light trapping in thin-film photovoltaic devices were investigated. In a nanowire device geometry, the initial objectives were to engineer vertical nanowire arrays to optimize optical confinement within the nanowires, and to extend this approach to core-shell heterostructures to achieve broadspectrum absorption while maintaining high opencircuit voltages. Subsequent work extended this approach to include fabrication of nanowire photovoltaic structures on low-cost substrates.

Research Organization:
Univ. of California, Oakland, CA (United States); Univ. of California, San Diego, CA (United States)
Sponsoring Organization:
USDOE
Contributing Organization:
University of California, San Diego, University of Texas at Austin, NASA Jet Propulsion Laboratory and the University of Karlsruhe
DOE Contract Number:
FG36-08GO18016
OSTI ID:
1083988
Report Number(s):
DOE08GO180163; 2007-4314
Country of Publication:
United States
Language:
English