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Title: Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres

Abstract

A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.

Inventors:
;
Publication Date:
Research Org.:
SNL-A (Sandia National Laboratories, Albuquerque, NM (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1083610
Patent Number(s):
8,425,681
Application Number:
12/388,103
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, George T., and Li, Qiming. Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres. United States: N. p., 2013. Web.
Wang, George T., & Li, Qiming. Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres. United States.
Wang, George T., and Li, Qiming. Tue . "Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres". United States. https://www.osti.gov/servlets/purl/1083610.
@article{osti_1083610,
title = {Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres},
author = {Wang, George T. and Li, Qiming},
abstractNote = {A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {4}
}

Patent:

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