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Title: Weak-link capacitor

Patent ·
OSTI ID:1083597

A process for making a dielectric material where a precursor polymer selected from poly(phenylene vinylene)polyacetylene, poly(p-phenylene), poly(thienylene vinylene), poly(1,4-naphthylene vinylene), and poly(p-pyridine vinylene) is energized said by exposure by radiation or increase in temperature to a level sufficient to eliminate said leaving groups contained within the precursor polymer, thereby transforming the dielectric material into a conductive polymer. The leaving group in the precursor polymer can be a chloride, a bromide, an iodide, a fluoride, an ester, an xanthate, a nitrile, an amine, a nitro group, a carbonate, a dithiocarbamate, a sulfonium group, an oxonium group, an iodonium group, a pyridinium group, an ammonium group, a borate group, a borane group, a sulphinyl group, or a sulfonyl group.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerqoe, NM)
Patent Number(s):
8,426,321
Application Number:
13/099,143
OSTI ID:
1083597
Country of Publication:
United States
Language:
English

References (3)

Soluble precursor to poly (cyanoterephthalydene) and method of preparation patent December 1995
S-benzoyl O-ethyl xanthate as a new photoinitiator: Photopolymerization and laser flash photolysis studies journal March 1993
Thermally Induced Failure of Polymer Dielectrics journal April 2010

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