Direct correlation of transport properties and microstructure in Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-x} thin film grain boundaries
- Argonne National Lab., IL (United States)
- Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
Individual 45{degrees} [0011] tilt grain boundaries in Y{sub l}Ba{sub 2}Cu{sub 3}O{sub 7{minus}x} thin films grown on biepitaxial substrates were studied. The thin films were grown using both pulsed organometallic beam epitaxy (POMBE) and laser ablation. Transport characteristics of the individual grain boundaries were measured including resistance -- temperature (R-T) and current -- voltage (I-V) dependencies with and without an applied magnetic field. In order to elucidate possible structural origins of the differences in transport behavior, the same grain boundaries which were electrically characterized were subsequently thinned for electron-microscopy analysis. Transmission-electron-microscopy and high-resolution-electron-microscopy were used to structurally characterize the grain boundaries. The macroscopic and microscopic structures of two boundaries, a nominally resistive and a superconducting grain boundary, are compared. Work supported by the National Science Foundation Office of Science and Technology Centers, under contract {number_sign}DMR 91-20000 (BVV, DBB) and the US Department of Energy, Basic Energy Sciences-Materials Science, under contract {number_sign}W-31-109-EN(S-38 (KLM).
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-31-109-ENG-38
- OSTI ID:
- 108219
- Report Number(s):
- ANL/MSD/CP-83317; CONF-950412-45; ON: DE95015825
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995; Other Information: PBD: Jul 1995
- Country of Publication:
- United States
- Language:
- English
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