Ferroelectric Gated Electrcial Transport in CdS Nanotetrapods

Journal Article · Sat Jan 01 04:00:00 EST 2011 · Nano Letters

DOI:https://doi.org/10.1021/nl104398v· OSTI ID:1081652

Fu, Wangyang ^[1]; Qin, Shengyong ^[1]; Liu, Lei ^[2]; Kim, Tae Hwan ^[1]; Hellstrom, Sondra L ^[1]; Wang, Wenlong ^[2]; Liang, Wenjie ^[2]; Bai, Xuedong ^[2]; Li, An-Ping ^[1]; Wang, Enge ^[1]

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1. ORNL
2. Chinese Academy of Sciences

Complex nanostructures such as semiconductor nanotetrapods are promising building blocks for next-generation nanoelectronics. Here we construct a field effect transistor (FET) based on single CdS nanotetrapods with a ferroelectric Ba0.7Sr0.3TiO3 (BST) film as high- , switchable gate dielectric. A cryogenic four-probe scanning tunneling microscopy (STM) is used to probe the electrical transport through individual nanotetrapods, which reveals a p-type field effect up to room temperature. The conductance modulation in the FET originates from the channel tuning in the arm-core-arm junctions of nanotetrapods, displaying a single-electron transistor effect at low temperature (8.5 K). The ferroelectric gate dielectric enables not only an enhanced capacitance coupling but the non-volatile memory effect as well. A proof-of-principle of ferroelectric FET operation has thus been demonstrated in a nanoscale three-dimensional object and at the single electron level.

• Research Organization: Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1081652
• Journal Information: Nano Letters, Journal Name: Nano Letters Journal Issue: 5 Vol. 11; ISSN 1530-6984
• Country of Publication: United States
• Language: English