skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Evidence of a Percolative Breakdown Mechanism in Tantalum Oxide ReRAM Switching.

Journal Article · · IEEE Electron Device Letters
OSTI ID:1079815

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1079815
Report Number(s):
SAND2013-4095J; 453126
Journal Information:
IEEE Electron Device Letters, Related Information: Proposed for publication in IEEE Electron Device Letters.
Country of Publication:
United States
Language:
English

Similar Records

Dynamics of Percolative Breakdown Mechanism in Tantalum Oxide ReRAM Switching.
Journal Article · Sat Jun 01 00:00:00 EDT 2013 · Transactions on Electron Devices · OSTI ID:1079815

Fast Switching Tungsten Oxide and Tantalum Oxide Based Electrochromic Films.
Journal Article · Thu Aug 01 00:00:00 EDT 2013 · Applied Surface Science · OSTI ID:1079815

Stages of Switching in Tantalum Oxide Memristor.
Conference · Tue Jan 01 00:00:00 EST 2013 · OSTI ID:1079815

Related Subjects