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Title: Enhanced Electrical Conductivity in Poly(3-hexylthiophene)/Fluorinated Tetracyanoquinodimethane Nanowires Grown with a Porous Alumina Template

Journal Article · · Langmuir
DOI:https://doi.org/10.1021/la304499k· OSTI ID:1079263
 [1];  [2];  [3];  [2];  [1]
  1. National Inst. for Materials Science (NIMS), Tsukuba (Japan). International Center for Materials Nanoarchitectonics (WPI-MANA); Kyushu Univ., Tsukuba (Japan). Dept. of Chemistry and Biochemistry, Faculty of Engineering
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  3. National Inst. for Materials Science (NIMS), Tsukuba (Japan). International Center for Materials Nanoarchitectonics (WPI-MANA)

Here, we report on improved electrical conductivity in poly(3-hexylthiophene) (P3HT)/2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) composite nanowires grown using an anodized aluminum oxide (AAO) template. The electrical conductivity of individual nanowire measured by four-probe scanning tunneling microscopy shows that F4-TCNQ molecules are effectively doped into P3HT by capillary force. The resistivity is tuned in the 0.1–10 Ω cm range by changing the F4-TCNQ concentration from 10 to 0.1 wt % and is 2–4 orders of magnitude smaller than that of the corresponding P3HT/F4-TNCQ thin film composites. Lastly, the AAO template-assisted synthesis approach thus appears to be effective for high chemical doping and for improving the electrical conductivity of the molecular wires.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
AC05-00OR22725
OSTI ID:
1079263
Journal Information:
Langmuir, Vol. 29, Issue 24; ISSN 0743-7463
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English