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Nitrogen is a deep acceptor in ZnO

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.3582819· OSTI ID:1076494
 [1];  [2];  [1]
  1. Washington State Univ., Pullman, WA (United States)
  2. COMSATS Institute of Information Technology (Pakistan)
Zinc oxide is a promising material for blue and UV solid-state lighting devices, among other applications. Nitrogen has been regarded as a potential p-type dopant for ZnO. However, recent calculations indicate that nitrogen is a deep acceptor. This paper presents experimental evidence that nitrogen is, in fact, a deep acceptor and therefore cannot produce p-type ZnO. A broad photoluminescence (PL) emission band near 1.7 eV, with an excitation onset of ~2.2 eV, was observed, in agreement with the deep-acceptor model of the nitrogen defect. Thus the deep-acceptor behavior can be explained by the low energy of the ZnO valence band relative to the vacuum level.
Research Organization:
Washington State Univ., Pullman, WA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Biological and Environmental Research (BER) (SC-23)
Grant/Contract Number:
FG02-07ER46386
OSTI ID:
1076494
Journal Information:
AIP Advances, Journal Name: AIP Advances Journal Issue: 2 Vol. 1; ISSN AAIDBI; ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping: Oxygen vacancy and nitrogen doping in ZnO journal August 2013
Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping journal October 2013
Identification of a Nitrogen-related acceptor in ZnO nanowires journal January 2019
Effects of hole localization on limiting p -type conductivity in oxide and nitride semiconductors journal January 2014
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Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films journal March 2018
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Recent progress of the native defects and p-type doping of zinc oxide journal April 2017
Evidence of defect band mechanism responsible for band gap evolution in ( ZnO ) 1 − x ( GaN ) x alloys journal October 2019
Fixed-node diffusion Monte Carlo description of nitrogen defects in zinc oxide journal February 2017
Zn vacancy-donor impurity complexes in ZnO journal March 2018
First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO journal December 2012
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IMPACT OF N DOPING ON THE PHYSICAL PROPERTIES OF ZnO THIN FILMS journal January 2018
Progress in ZnO Acceptor Doping: What Is the Best Strategy? journal January 2014
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Hydrogen in oxide semiconductors journal May 2012

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