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The Role of Barrier Structure in Current Collapse of AlGaN/GaN High Electron Mobility Transistors with Thick AlGaN Barriers.

Journal Article · · Proposed for publication in Applied Physics Letters.
DOI:https://doi.org/10.1063/1.4772503· OSTI ID:1073201
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Abstract Not Provided

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1073201
Report Number(s):
SAND2012-7066J
Journal Information:
Proposed for publication in Applied Physics Letters., Journal Name: Proposed for publication in Applied Physics Letters. Journal Issue: 24 Vol. 101; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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