Electronic properties of multiple delta-doped layers in silicon and GaAs
- Universidade de Sao Paulo (Brazil); and others
Self-consistent electronic subband structure calculations of periodic n-type delta ({delta})-doped layers in Si and GaAs are performed within the local density-functional approximation. The behavior of the energy levels, potential profiles, miniband occupancies, and Fermi level position with the variation of the dopant concentration N{sub D} and the spacing between the {sigma}-layers d{sub s} is examined for Si {sigma}-doping in GaAs and Sb {sigma}-doping in Si. The physical properties of these {sigma}-doping structures show a strong dependence on d{sub s}, reflecting a transition from isolated delta-wells to superlattices as d{sub s}, decreases. The crossover involving the change from a two-dimensional to three-dimensional behavior is discussed for both kinds of systems.
- OSTI ID:
- 107082
- Report Number(s):
- CONF-9402143-; TRN: 95:006488-0056
- Resource Relation:
- Conference: Atomic, molecular, and condensed matter theory and computational methods, Ponte Vedra Beach, FL (United States), 12-19 Feb 1994; Other Information: PBD: 1994; Related Information: Is Part Of Proceedings of the international symposium on atomic, molecular and condensed matter theory and computational methods; Loewdin, P.O.; Oehrn, N.Y.; Sabin, J.R.; Zerner, M.C. [eds.] [Florida Univ., Gainesville, FL (United States)]; PB: 714 p.
- Country of Publication:
- United States
- Language:
- English
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