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U.S. Department of Energy
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Z-Pinch Drivers for Shock Physics Research

Conference ·
OSTI ID:1066

The recent development of Z pinch drivers for producing intense radiation envkomn~ enables study of physical and mechanical properties of condensed materials in regimes previously inaccessible in the Mm-am-y. With Z pinch radiation sources, it is possible fo subject mm-sized sampies to pianar compressions of a fe w Mbar. Tie-resolved velocity interferometry was used to perform the first shock loading and unloading profiles in Al and Be for ablatively driven shock$s to 3 Mbar and the first iseritropic loading of iron specimens to 300 War. A principai goai of our shock physics program is to establish a capability to make accurats eqwion of state measurements on the Z pulsed radiation source. The Z accelerator is a source of intense radntion, which can be used to drive ablative shocks for E(X$ studies. With this source, ablative muki-Mbar shocks can be produced to study materials over the range of interest to both weapons and ICF physics programs. In developing the capability to diagnose these types of studies on Z, techniques commonly used in conventional impact generated experiments were implemented. The primary diagnostic presently being used for this work is ve"!ocity interferoinetry, VL%4R, [2] which not only provides Hugoniot particle velocity measurements, but also measurements of non-shock EOS measummenu,, such as isentropic compression. In addition to VKSAR capability, methods for measuring shock velocity have also been developed for shock studies on Z. When used in conjunction with the Rankine-Hugoniot jump conditions, material response at high temperatures and pressures can be inferred. The next section discusses the basic approach for conducting EOS experiments on Z for both shock loading and istmtropic compression on the Z accelerator.

Research Organization:
Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1066
Report Number(s):
SAND98-2270C; ON: DE00001066
Country of Publication:
United States
Language:
English

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