Electrical and thermal conductivity of low temperature CVD graphene: the effect of disorder

Journal Article · Wed May 25 04:00:00 EDT 2011 · Nanotechnology (Print)

DOI:https://doi.org/10.1088/0957-4484/22/27/275716· OSTI ID:1065758

Vlassiouk, Ivan ^[1]; Smirnov, Sergei ^[2]; Ivanov, Ilia ^[3]; Fulvio, Pasquale F. ^[4]; Dai, Sheng ^[4]; Meyer, Harry ^[5]; Chi, Miaofang ^[5]; Hensley, Dale ^[3]; Datskos, Panos ^[1]; Lavrik, Nickolay V. ^[3]

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1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Measurement Science & Engineering Division
2. New Mexico State Univ., Las Cruces, NM (United States). Dept. of Chemistry & Biochemistry
3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science
4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical Sciences Division
5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division

In this paper we present a study of graphene produced by chemical vapor deposition (CVD) under different conditions with the main emphasis on correlating the thermal and electrical properties with the degree of disorder. Graphene grown by CVD on Cu and Ni catalysts demonstrates the increasing extent of disorder at low deposition temperatures as revealed by the Raman peak ratio, I{sub G}/I{sub D}. We relate this ratio to the characteristic domain size, L_a, and investigate the electrical and thermal conductivity of graphene as a function of La. The electrical resistivity, ρ, measured on graphene samples transferred onto SiO₂/Si substrates shows linear correlation with L_a⁻¹. The thermal conductivity, K, measured on the same graphene samples suspended on silicon pillars, on the other hand, appears to have a much weaker dependence on La, close to K ~ L_a^1/3. It results in an apparent ρ ~ K³ correlation between them. Despite the progressively increasing structural disorder in graphene grown at lower temperatures, it shows remarkably high thermal conductivity (10²–10³ W K⁻¹ m⁻¹) and low electrical (10³–3 × 10⁵ Ω) resistivities suitable for various applications.

• Research Organization: Energy Frontier Research Centers (EFRC); Fluid Interface Reactions, Structures and Transport Center (FIRST)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• OSTI ID: 1065758
• Journal Information: Nanotechnology (Print), Journal Name: Nanotechnology (Print) Journal Issue: 27 Vol. 22; ISSN 0957-4484
• Publisher: IOP Publishing
• Country of Publication: United States
• Language: English

Related Subjects

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hydrogen and fuel cells
materials and chemistry by design
mechanical behavior
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synthesis (novel materials)