Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires

Journal Article · Mon Mar 28 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3573832· OSTI ID:1065706

Baird, Lee ^[1]; Ong, C. P. ^[1]; Cole, R. Adam ^[1]; Haegel, N. M. ^[1]; Talin, A. Alec ^[2]; Li, Qiming ^[3]; Wang, George T. ^[3]

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1. Naval Postgraduate School, Monterey, CA (United States). Dept. of Physics
2. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Minority carrier diffusion lengths L_d are calculated for GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires using a procedure based on imaging of recombination luminescence. The result of shell material on conveyance properties is recorded. An AlGaN shell produces L_d values in surplus of 1μm and a relative insensitivity to wire diameter. An InGaN shell reduces effective diffusion length, while a dependence of L_d on diameter is observed for unshielded nanowires.

• Research Organization: Energy Frontier Research Centers (EFRC); EFRC for Solid State Lighting Science (SSLS)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1065706
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 98; ISSN 0003-6951; ISSN APPLAB
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

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