High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH₃-based molecular beam epitaxy

Journal Article · Fri Apr 01 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3575563· OSTI ID:1064968

Lang, J. R. ^[1]; Neufeld, C. J. ^[1]; Hurni, C. A. ^[1]; Cruz, S. C. ^[1]; Matioli, E. ^[1]; Mishra, U. K. ^[1]; Speck, J. S. ^[1]

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1. Univ. of California, Santa Barbara, CA (United States)

High external quantum efficiency (EQE) p-i-n heterojunction solar cellsgrown by NH₃ -based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorptionmeasurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (<365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN.

• Research Organization: Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: SC0001009
• OSTI ID: 1064968
• Journal Information: Applied Physics Letters, Vol. 98; Related Information: CEEM partners with the University of California, Santa Barbara (lead); Purdue University; Los Alamos National Laboratory; National Renewable Energy Laboratory; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
solar (photovoltaic)
solid state lighting
phonons
thermoelectric
bio-inspired
energy storage (including batteries and capacitors)
electrodes - solar
defects
charge transport
materials and chemistry by design
optics
synthesis (novel materials)
synthesis (self-assembly)
synthesis (scalable processing)