Charge generation layers comprising transition metal-oxide/organic interfaces. Electronic structure and charge generation mechanism
- Princeton Univ., NJ (United States)
- InnovationLab GmbH, Heidelberg (Germany)
- Technical Univ. of Braunschweig (Germany)
- Univ. of Wuppertal (Germany)
The energetics of an archetype charge generation layer (CGL) architecture comprising of 4,4' ,4 '' -tris(N -carbazolyl)triphenylamine (TCTA), tungsten oxide (WO3 ) , and bathophenanthroline (BPhen) n-doped with cesium carbonate (Cs2 CO3 ) are determined by ultraviolet and inverse photoemissionspectroscopy. We show that the charge generation process occurs at the interface between the hole-transport material (TCTA) and WO3 and not, as commonly assumed, at the interface between WO3 and the n-doped electron-transport material (BPhen:Cs2 CO3 ) . However, the n-doped layer is also essential to the realization of an efficient CGL structure. The charge generation mechanism occurs via electron transfer from the TCTA highest occupied molecular orbital level to the transition metal-oxide conduction band.
- Research Organization:
- Energy Frontier Research Centers (EFRC); Center for Interface Science: Solar Electric Materials (CISSEM)
- Sponsoring Organization:
- USDOE SC Office of Basic Energy Sciences (SC-22)
- Contributing Organization:
- Princeton University, National Science Foundation, German Federal Ministry for Education and Research
- DOE Contract Number:
- SC0001084
- OSTI ID:
- 1064765
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 96; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
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