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Title: Die singulation method and package formed thereby

Abstract

A method is disclosed for singulating die from a substrate having a sacrificial layer and one or more device layers, with a retainer being formed in the device layer(s) and anchored to the substrate. Deep Reactive Ion Etching (DRIE) etching of a trench through the substrate from the bottom side defines a shape for each die. A handle wafer is then attached to the bottom side of the substrate, and the sacrificial layer is etched to singulate the die and to form a frame from the retainer and the substrate. The frame and handle wafer, which retain the singulated die in place, can be attached together with a clamp or a clip and to form a package for the singulated die. One or more stops can be formed from the device layer(s) to limit a sliding motion of the singulated die.

Inventors:
 [1];  [2];  [3];  [2];  [2]
  1. Tucson, AZ
  2. Albuquerque, NM
  3. Tijeras, NM
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1064432
Patent Number(s):
8,236,611
Application Number:
12/758,833
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Anderson, Robert C, Shul, Randy J, Clews, Peggy J, Baker, Michael S, and De Boer, Maarten P. Die singulation method and package formed thereby. United States: N. p., 2012. Web.
Anderson, Robert C, Shul, Randy J, Clews, Peggy J, Baker, Michael S, & De Boer, Maarten P. Die singulation method and package formed thereby. United States.
Anderson, Robert C, Shul, Randy J, Clews, Peggy J, Baker, Michael S, and De Boer, Maarten P. Tue . "Die singulation method and package formed thereby". United States. https://www.osti.gov/servlets/purl/1064432.
@article{osti_1064432,
title = {Die singulation method and package formed thereby},
author = {Anderson, Robert C and Shul, Randy J and Clews, Peggy J and Baker, Michael S and De Boer, Maarten P},
abstractNote = {A method is disclosed for singulating die from a substrate having a sacrificial layer and one or more device layers, with a retainer being formed in the device layer(s) and anchored to the substrate. Deep Reactive Ion Etching (DRIE) etching of a trench through the substrate from the bottom side defines a shape for each die. A handle wafer is then attached to the bottom side of the substrate, and the sacrificial layer is etched to singulate the die and to form a frame from the retainer and the substrate. The frame and handle wafer, which retain the singulated die in place, can be attached together with a clamp or a clip and to form a package for the singulated die. One or more stops can be formed from the device layer(s) to limit a sliding motion of the singulated die.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 07 00:00:00 EDT 2012},
month = {Tue Aug 07 00:00:00 EDT 2012}
}

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