Ultra-short channel field effect transistors based on Ge/Si core/shell nanowires.
Conference
·
OSTI ID:1063561
Abstract Not Provided
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1063561
- Report Number(s):
- SAND2013-1366C
- Country of Publication:
- United States
- Language:
- English
Similar Records
Elimination of Gold Diffusion in the Heterostructure Core/Shell Growth of High Performance Ge/Si Nanowire HFETs.
Carrier leakage in Ge/Si core-shell nanocrystals for lasers: core size and strain eects.
Short channel effects in carbon nanotube transistors.
Conference
·
Sun Feb 28 23:00:00 EST 2010
·
OSTI ID:1124256
Carrier leakage in Ge/Si core-shell nanocrystals for lasers: core size and strain eects.
Conference
·
Mon Aug 01 00:00:00 EDT 2011
·
OSTI ID:1143472
Short channel effects in carbon nanotube transistors.
Conference
·
Mon Feb 28 23:00:00 EST 2005
·
OSTI ID:948991