Quantitative and Depth-Resolved Deep Level Defect Distributions in InGaN/GaN Light Emitting Diodes.

Journal Article · Sat Sep 01 00:00:00 EDT 2012 · Proposed for publication in Optics Materials Express.

DOI:https://doi.org/10.1364/OE.20.00A812· OSTI ID:1060444

Armstrong, Andrew; Koleske, Daniel; Crawford, Mary H; Lee, Stephen R; Henry, Tania A

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1060444
• Report Number(s): SAND2012-7349J
• Journal Information: Proposed for publication in Optics Materials Express., Vol. 20, Issue S6; ISSN 1094--4087
• Country of Publication: United States
• Language: English