Quantitative and Depth-Resolved Deep Level Defect Distributions in InGaN/GaN Light Emitting Diodes.
Journal Article
·
· Proposed for publication in Optics Materials Express.
Abstract Not Provided
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1060444
- Report Number(s):
- SAND2012-7349J
- Journal Information:
- Proposed for publication in Optics Materials Express., Journal Name: Proposed for publication in Optics Materials Express. Journal Issue: S6 Vol. 20; ISSN 1094-4087
- Country of Publication:
- United States
- Language:
- English
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