Utilization of photoconductive gain in a-Si:H devices for radiation detection

Conference · Mon May 01 04:00:00 EDT 1995

OSTI ID:105864

Lee, H K; Drewery, J S; Hong, W S; Jing, T; Kaplan, S N; Perez-Mendez, V

The photoconductive gain mechanism in a-Si:H was investigated in connection with applications to radiation detection. Various device types such as p-i-n, n-i-n and n-i-p-i-n structures were fabricated and tested. Photoconductive gain was measured in two time scales: one for short pulses of visible light (<1 {mu}sec) which simulates the transit of an energetic charged particle, and the other for rather long pulses of light (1 msec) which simulates x-ray exposure in medical imaging. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We found typical charge gains of 3 {approximately} 9 for short pulses and a few hundred for long pulses at a dark current level of 10 mA/cm{sup 2}. Various gain results are discussed in terms of the device structure, applied bias and dark current.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 105864
• Report Number(s): LBL--37082; CONF-950412--39; ON: DE95014795
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
AMORPHOUS STATE
CURRENT DENSITY
GAIN
PHOTOCONDUCTORS
PHOTOCURRENTS
SEMICONDUCTOR MATERIALS
SHOWER COUNTERS
SILICON
VAPOR DEPOSITED COATINGS