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Title: Direct Observation of a Pressure-Induced Precursor Lattice in Silicon

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
DOE - BASIC ENERGY SCIENCES
OSTI Identifier:
1056104
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 20; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Shen, Guoyin, Ikuta, Daijo, Sinogeikin, Stanislav, Li, Quan, Zhang, Yi, and Chen, Changfeng. Direct Observation of a Pressure-Induced Precursor Lattice in Silicon. United States: N. p., 2012. Web. doi:10.1103/PhysRevLett.109.205503.
Shen, Guoyin, Ikuta, Daijo, Sinogeikin, Stanislav, Li, Quan, Zhang, Yi, & Chen, Changfeng. Direct Observation of a Pressure-Induced Precursor Lattice in Silicon. United States. doi:10.1103/PhysRevLett.109.205503.
Shen, Guoyin, Ikuta, Daijo, Sinogeikin, Stanislav, Li, Quan, Zhang, Yi, and Chen, Changfeng. Thu . "Direct Observation of a Pressure-Induced Precursor Lattice in Silicon". United States. doi:10.1103/PhysRevLett.109.205503.
@article{osti_1056104,
title = {Direct Observation of a Pressure-Induced Precursor Lattice in Silicon},
author = {Shen, Guoyin and Ikuta, Daijo and Sinogeikin, Stanislav and Li, Quan and Zhang, Yi and Chen, Changfeng},
abstractNote = {},
doi = {10.1103/PhysRevLett.109.205503},
journal = {Physical Review Letters},
issn = {0031-9007},
number = 20,
volume = 109,
place = {United States},
year = {2012},
month = {11}
}