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Title: Boron nitride nanotubes

Patent ·
OSTI ID:1055440

Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

Research Organization:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-06OR23177
Assignee:
National Institute of Aerospace Associates (Hampton, VA); The United States of America as represented by the Administration of NASA (Washington, DC)
Patent Number(s):
8,206,674
Application Number:
US patent applicaiton 12/152,414
OSTI ID:
1055440
Country of Publication:
United States
Language:
English

References (2)

Nanotubes in boron nitride laser heated at high pressure journal September 1996
Catalyst-free synthesis of boron nitride single-wall nanotubes with a preferred zig-zag configuration journal September 2001