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First-principles study of iron segregation into silicon Σ5 grain boundary

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3369390· OSTI ID:1054397

Abstract not provided

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Building Technologies Solid State Lighting program; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1054397
Report Number(s):
NREL/JA-520-48838
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 107; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

References (22)

Soft self-consistent pseudopotentials in a generalized eigenvalue formalism journal April 1990
Computational studies of grain boundaries in covalent materials journal March 2002
Electron Spin Resonance in Semiconductors book January 1962
Inversion Domain and Stacking Mismatch Boundaries in GaN journal July 1996
Spin of Fe 57 journal October 1958
The atomic and electronic structure of a (001) tilt grain boundary in Si journal June 1988
Calculation of the spin-polarized electronic structure of an interstitial iron impurity in silicon journal June 1985
Electronic Structure of Transition Metal Ions in a Tetrahedral Lattice journal August 1960
Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium journal May 1994
Iron and its complexes in silicon journal July 1999
Dopant Segregation at Semiconductor Grain Boundaries through Cooperative Chemical Rebonding journal August 1996
Electronic and magnetic structure of 3 d– transition-metal point defects in silicon calculated from first principles journal January 1990
Ground-state properties of isolated interstitial iron in silicon: Electronic structure and hyperfine interactions journal August 1996
Effect of intentional bulk contamination with iron on multicrystalline silicon solar cell properties journal October 2007
Effect of gettered iron on recombination in diffused regions of crystalline silicon wafers journal February 2006
Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length journal November 2003
Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon journal July 2003
Engineering metal-impurity nanodefects for low-cost solar cells journal August 2005
Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation journal September 1992
Effect of iron in silicon feedstock on p- and n-type multicrystalline silicon solar cells journal November 2008
Transition-metal profiles in a multicrystalline silicon ingot journal February 2005
Spin Resonance of Transition Metals in Silicon journal January 1960