Thermal Conductance at Atomically Clean and Disordered Silicon/Aluminum Interfaces: A Molecular Dynamics Simulation Study

Choi, Woon Ih.; Kim, Kwisseon; Narumanchi, Sreekant

doi:10.1063/1.4748872

Title: Thermal Conductance at Atomically Clean and Disordered Silicon/Aluminum Interfaces: A Molecular Dynamics Simulation Study

Journal Article · Sat Sep 01 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4748872· OSTI ID:1052499

Choi, Woon Ih.; Kim, Kwisseon; Narumanchi, Sreekant

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Vehicle Technologies Office (EE-3V)

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1052499

Report Number(s):: NREL/JA-5400-53915

Journal Information:: Journal of Applied Physics, Vol. 112, Issue 5; Related Information: Article No. 054305

Country of Publication:: United States

Language:: English

References (23)

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