EUV Resists: Illuminating the challenges
Journal Article
·
· Journal of Photopolymer Science and Technology
As extreme ultraviolet (EUV) lithography enters the commercialization phase with potential introduction at the 3x nm half-pitch node in 2013, the attention of advanced EUV resist research has turned to addressing patterning at 16-nm half pitch and below. Whereas line-edge roughness is the primary concern at 2x half pitch and larger, research at the 16-nm half pitch level is uncovering broader.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1052180
- Report Number(s):
- LBNL-5239E
- Journal Information:
- Journal of Photopolymer Science and Technology, Journal Name: Journal of Photopolymer Science and Technology Journal Issue: 6 Vol. 24; ISSN 0914-9244
- Country of Publication:
- United States
- Language:
- English
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