Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals

Journal Article · Sun Jan 01 00:00:00 EST 2012 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.86.100102· OSTI ID:1050917

Debelle, Aurelien ^[1]; Backman, Marie ^[2]; Thome, Lionel ^[1]; Weber, William J ^[3]; Toulemonde, Marcel ^[4]; Mylonas, Stamatis ^[1]; Boulle, Alexandre ^[5]; Pakarinen, Olli H ^[6]; Juslin, Niklas ^[2]; Djurabekova, Flyura ^[6]; Nordlund, Kai ^[6]; Garrido, Frederico ^[1]; Chaussende, Didier ^[7]

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1. Universite Paris Sud, Orsay, France
2. University of Tennessee, Knoxville (UTK)
3. ORNL
4. CEA-CNRS-ENSICAEN-University of Caen, FRANCE
5. SPCTS, Limoges Cedex, France
6. University of Helsinki
7. LMGP, CNRS-Grenoble, France

The healing effect of intense electronic energy deposition arising during swift heavy ion (SHI) irradiation is demonstrated in the case of 3C-SiC damaged by nuclear energy deposition. Experimental (ion channeling experiments) and computational (molecular dynamics simulations) studies provide consistent indications of disorder decrease after SHI irradiation. Furthermore, both methods establish that SHI-induced recrystallization takes place at amorphous-crystalline interfaces. The recovery process is unambiguously accounted for by the thermal spike phenomenon.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1050917
• Journal Information: Physical Review B, Vol. 86, Issue 10; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

29 ENERGY PLANNING
POLICY AND ECONOMY
74 ATOMIC AND MOLECULAR PHYSICS
CHANNELING
DEPOSITION
HEALING
HEAVY IONS
IRRADIATION
NUCLEAR ENERGY
RECRYSTALLIZATION
SILICON CARBIDES
THERMAL SPIKES
Silicon carbide
swift heavy ion
molecular dynamics
thermal spike
recrystallization