In situ growth and density-functional-theory study of polarity-dependent homo-epitaxial ZnO microwires
- ORNL
- Peking University
- University of Tennessee, Knoxville (UTK)
Polarity-dependent homo-epitaxy on (0001)-Zn and (0001)-O surfaces of cleaved ZnO microwires was investigated by in situ growth in ESEMand DFT simulations. ZnO monomers adsorption, adatoms desorption and chemisorption were simulated to understand the explicit mechanism.
- Research Organization:
- Oak Ridge National Laboratory (ORNL)
- Sponsoring Organization:
- SC USDOE - Office of Science (SC)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1050388
- Journal Information:
- CrystEngComm, Journal Name: CrystEngComm Journal Issue: 2 Vol. 14; ISSN 1466-8033
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth mechanisms of ZnO(0001) investigated using the first-principles calculation
Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer
Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate
Journal Article
·
Sat Sep 15 00:00:00 EDT 2012
· Journal of Applied Physics
·
OSTI ID:22089459
Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer
Journal Article
·
Sun Dec 05 23:00:00 EST 2004
· Applied Physics Letters
·
OSTI ID:20634493
Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate
Journal Article
·
Tue Dec 14 23:00:00 EST 2004
· Journal of Applied Physics
·
OSTI ID:20662208