Thermoelectric properties of polycrystalline In4Se3 and In4Te3

Journal Article · Fri Jan 01 04:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3389494· OSTI ID:1049924

Shi, Xun ^[1]; Cho, Jung Y ^[2]; Salvador, James R. ^[2]; Yang, Jihui ^[3]; Wang, Hsin ^[4]

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1. Optimal Inc., Plymouth, Michigan 48170, USA
2. GM R&D and Planning, Warren, Michigan
3. General Motors Corporation-R&D
4. Oak Ridge National Laboratory (ORNL)

High thermoelectric performance of a single crystal layered compound In{sub 4}Se{sub 3} was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3}. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/m K, is observed. The power factors for In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3} are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In{sub 4}Se{sub 3}.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1049924
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 96; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
MONOCRYSTALS
PERFORMANCE
POWER FACTOR
THERMAL CONDUCTIVITY
THERMOELECTRIC MATERIALS
THERMOELECTRIC PROPERTIES
TRANSPORT