Scaling exponent within the side-jump mechanism of Hall effect size-dependence in Ni nanocrystals

Journal Article · Tue Jan 01 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2987517· OSTI ID:1049160

Kumar, Dhananjay ^[1]; Oh, Sang Ho ^[1]; Pennycook, Stephen J ^[2]; Majumdar, A. K. ^[1]

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1. North Carolina Agricultural and Technical State University
2. ORNL

High-resolution Hall data in only 3.5 {micro}g of Ni nanocrystals, grown in a planar array on TiN, are reported. We conclude from the exponent, n-1.06 {+-} 0.01 in R{sub s}-{rho}{sup n}, where R{sub s} is the extraordinary Hall constant and {rho} is the Ohmic resistivity, that the side-jump mechanism could still be operative if the nanocrystals are below a certain critical size and the mean free path of the electrons is strongly temperature dependent only in the magnetic layer. Also, the 1000 times larger value of R{sub s} than those in bulk Ni makes it an ideal candidate for magnetic sensors.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1049160
• Journal Information: Applied Physics Letters, Vol. 93, Issue 13; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRITICAL SIZE
ELECTRIC CONDUCTIVITY
ELECTRONS
FERROMAGNETIC MATERIALS
HALL EFFECT
MAGNETIZATION
MEAN FREE PATH
NICKEL
SENSORS