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Simulations of dislocation pile-ups at assymetric tilt boundaries in aluminum

Conference ·
OSTI ID:1048810
Materials deformation processes are increasingly approachable through the both conventional and accelerated molecular dynamics. In one deformation process, dislocation pile-up at a grain boundary, a greater understanding is required as to how dislocations transmit through grain boundaries, causing plastic deformation, or reflect and reconstruct the grain boundary, but with no macroscopic deformation. Here dislocation pile-ups in an alwninum bicrystal with an asymmetric tilt grain boundary are simulated atomistically, introducing effects of dislocation interactions beyond linear elastic ones. The observed responses as functions of the number of explicitly modeled dislocations and the magnitude of the applied stress are discussed. Typical conditions for the simulations consist of thermal relaxation room temperature, five active dislocations inserted within a 6.5-million-atom cell, and an additional fourteen dislocations represented within the atomistic simulation by their elastic strain fields. The dislocations are initially distributed according to linear elastic estimates of their positions in a double-ended pile-up from a chosen far-field stress. The whole cell is allowed to relax according to a procedure to be described. In the ensuing simulations, the system is propagated for some substantial period of time (lOs of ps), followed by small increments of strain. After a number of such increments, we observe all of the anticipated events. Usually several of the closest dislocations are absorbed into the grain boundary, resulting in varying amounts of reconstruction. Reflections from the boundary are common and show a strong dependence on sample thickness. Transmission events are seen on both slip systems in the other grain. The particulars of these events will be described as well.
Research Organization:
Los Alamos National Laboratory (LANL)
Sponsoring Organization:
DOE
DOE Contract Number:
AC52-06NA25396
OSTI ID:
1048810
Report Number(s):
LA-UR-11-00453; LA-UR-11-453
Country of Publication:
United States
Language:
English

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